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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1790
SWITCHING N-AND P-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8 5 N-Channel 1 ; Source 1 2 ; Gate 1 7,8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5,6 ; Drain 2
DESCRIPTION
This product is N-and P-Channel MOS Field Effect Transistor designed for motor driver applications.
FEATURES
* Dual chip type * Low on-resistance N-Channel RDS(on)1 = 0.12 TYP. (VGS = 10 V, ID = 0.5 A)
1.44 1.8 MAX.
1 5.37 MAX.
+0.10 -0.05
P-Channel
4
6.0 0.3 4.4 0.8
RDS(on)2 = 0.19 TYP. (VGS = 4 V, ID = 0.5 A) P-Channel RDS(on)1 = 0.45 TYP. (VGS = -10 V, ID = -0.35 A) RDS(on)2 = 0.74 TYP. (VGS = -4 V, ID = -0.35 A) * Low input capacitance N-Channel Ciss = 180 pF TYP. P-Channel Ciss = 230 pF TYP. * Built-in G-S protection diode * Small and surface mount package (Power SOP8)
0.15
0.05 MIN.
0.5 0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 -0.05
0.12 M
EQUIVARENT CIRCUIT
Drain Drain
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
Gate
PA1790G
Body Diode
Gate
Body Diode
Gate Protection Diode
Source
Gate Protection Diode
Source
N-Channel
P-Channel
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G14320EJ1V0DS00 (1st edition) Date Published May 1999 NS CP(K) Printed in Japan
(c)
1999
PA1790
ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.)
PARAMETER Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2 Note2
SYMBOL VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
N-CHANNEL 60 20 1.0 4.0
P-CHANNEL -60
# 20 # 0.7 # 2.8
UNIT V V A A W W C C
Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature
1.7 2.0 150 -55 to +150
Notes 1. PW 10 s, Duty Cycle 1 % 2 2. Mounted on ceramic substrate of 2000 mm x 2.25 mm
2
Data Sheet G14320EJ1V0DS00
PA1790
ELECTRICAL CHARACTERISTICS (TA = 25 C, All terminals are connected.)
N-CHANNEL
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 0.5 A VGS = 4 V, ID = 0.5 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 0.5 A VDS = 60 V, VGS = 0 V VGS = 16 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 0.5 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 1.0 A VDD = 48 V VGS = 10 V IF = 1.0 A, VGS = 0 V IF = 1.0 A, VGS = 0 V di/dt = 100 A / s 180 100 35 1 1.4 23 17 8 1 3.5 0.75 30 33 1.0 1.0 MIN. TYP. 0.12 0.19 1.7 1.7 10 10 MAX. 0.26 0.34 2.5 UNIT V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL PG. RG RG = 10 VDD
ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS
IG = 2 mA
VGS(on) 90 %
VGS
Wave Form
RL VDD
0
10 %
PG.
50
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
Data Sheet G14320EJ1V0DS00
3
PA1790
P-CHANNEL
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = -10 V, ID = -0.35 A VGS = -4 V, ID = -0.35 A VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -0.35 A VDS = -60 V, VGS = 0 V VGS = # 16 V, VDS = 0 V VDS = -10 V VGS = 0 V f = 1 MHz ID = -0.35 A VGS(on) = -10 V VDD = -30 V RG = 10 ID = -0.7 A VDD = -48 V VGS = -10 V IF = 0.7 A, VGS = 0 V IF = 0.7 A, VGS = 0 V di/dt = 100 A / s 230 100 25 1.9 1.7 30 15 7.6 1 2 0.85 58 130 -1.0 5.0 -10
# 10
MIN.
TYP. 0.45 0.74 -1.7
MAX. 0.6 1.1 -2.5
UNIT V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL PG. RG RG = 10 VDD
ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS
IG = 2 mA
VGS(on) 90 %
VGS
Wave Form
RL VDD
0
10 %
PG.
50
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
4
Data Sheet G14320EJ1V0DS00
PA1790
[MEMO]
Data Sheet G14320EJ1V0DS00
5
PA1790
[MEMO]
6
Data Sheet G14320EJ1V0DS00
PA1790
[MEMO]
Data Sheet G14320EJ1V0DS00
7
PA1790
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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